CMDD6001_10

CMDD6001 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for switching applications requiring a extremely low leakage diode. MARKING CODE: C61 SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 75 100 250 250 4.0 1.0 250 -65 to +150 500 UNITS V V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=75V BVR IR=100μA 100 VF IF=1.0mA VF IF=10mA VF IF=100mA CT VR=0, f=1.0MHz trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MAX 500 0.85 0.95 1.1 2.0 3.0 UNITS pA V V V V pF μs R4 (8-January 2010) CMDD6001 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: C61 R4 (8-January 2010) w w w. c e n t r a l s e m i . c o m