CMDSH-4E ENHANCED SPECIFICATION SCHOTTKY DIODE
Central
TM
Semiconductor Corp.
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an Enhanced version of the CMDSH-3 Silicon Schottky Diode in an SOD-323 Surface Mount Package. ENHANCED SPECIFICATIONS: ♦ IO from 100 mA max to 200 mA max.
SOD-323 CASE
♦ ♦
BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max.
MARKING CODE: S1E
MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM IO IFRM IFSM PD TJ, Tstg ΘJA (TA=25°C unless otherwise noted) MIN 40 TYP 50 0.29 0.37 0.61 0.65 90 25 7.0 MAX UNITS V V V V V nA µA pF ns UNITS V mA mA mA mW °C °C/W
♦Peak Repetitive Reverse Voltage ♦Average Forward Current
Peak Repetitive Forward Voltage Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
40 200 350 750 250 -65 to +150 500
ELECTRICAL CHARACTERISTICS: SYMBOL TEST CONDITIONS IR=100µA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=25V VR=25V, TA=100°C VR=1.0V, f=1 MHz
♦BVR ♦VF ♦VF ♦♦VF
VF
0.33 0.42 0.80 1.0 500 100 5.0
IR IR CT trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ ♦♦
Enhanced specification. Additional Enhanced specification.
R0 (10-May 2004)
Central
TM
Semiconductor Corp.
CMDSH-4E ENHANCED SPECIFICATION SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Cathode 2) Anode
MARKING CODE: S1E
R0 (10-May 2004)
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