CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH-4E is an
enhanced version of the CMDSH-3 silicon Schottky
diode in an SOD-323 surface mount package.
ENHANCED SPECIFICATIONS:
♦ IO from 100mA MAX to 200mA MAX
♦ BVR from 30V MIN to 40V MIN
♦ VF from 1.0V MAX to 0.8V MAX
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C)
MARKING CODE: S1E
SYMBOL
♦ Peak Repetitive Reverse Voltage
♦ Average Forward Current
VRRM
IO
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
UNITS
40
V
200
mA
IFRM
IFSM
350
mA
750
mA
PD
TJ, Tstg
250
mW
-65 to +150
°C
ΘJA
500
°C/W
ELECTRICAL
SYMBOL
IR
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VR=25V
90
IR
VR=25V, TA=100°C
IR=100μA
♦ BVR
VF
25
40
MAX
500
UNITS
nA
100
μA
50
V
IF=2.0mA
0.29
0.33
V
IF=15mA
0.37
0.42
V
IF=100mA
IF=200mA
0.51
0.80
V
0.65
1.0
V
CJ
VR=1.0V, f=1.0MHz
7.0
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
♦ VF
♦ VF
♦♦ VF
pF
5.0
ns
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R3 (11-February 2016)
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: S1E
R3 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
CMDSH-4E
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
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when ordering (example: 2N2222A PBFREE).
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