CMDSH-4E_10

CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an Enhanced version of the CMDSH-3 Silicon Schottky Diode in an SOD-323 Surface Mount Package. ENHANCED SPECIFICATIONS: ♦ IO from 100mA max to 200mA max. ♦ ♦ SOD-323 CASE BVR from 30V min to 40V min. VF from 1.0V max to 0.8V max. MARKING CODE: S1E ♦Peak Repetitive Reverse Voltage ♦Average Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25°C) SYMBOL VRRM IO IFRM IFSM PD TJ, Tstg ΘJA 40 200 350 750 250 -65 to +150 500 UNITS V mA mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=25V VR=25V, TA=100°C IR=100μA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω 40 IR TYP 90 25 50 0.29 0.37 0.61 0.65 7.0 MAX 500 100 0.33 0.42 0.80 1.0 5.0 UNITS nA μA V V V V V pF ns ♦BVR ♦VF ♦VF ♦♦VF CT trr VF ♦ ♦♦ Enhanced specification. Additional Enhanced specification. R2 (8-January 2010) CMDSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: S1E R2 (8-January 2010) w w w. c e n t r a l s e m i . c o m