CMDSH2-3_10

CMDSH2-3 SURFACE MOUNT HIGH CURRENT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH2-3 type is a Silicon Schottky Diode, manufactured in a SUPERmini™ surface mount package, designed for applications requiring a low forward voltage drop. MARKING CODE: S2 SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL IR BVR VF VF VF VF CT TEST CONDITIONS VR=30V IR=100µA IF=2.0mA IF=15mA IF=100mA IF=200mA VR=10V, f=1.0MHz SYMBOL VRRM IO IFSM PD TJ, Tstg ΘJA 30 200 1.0 250 -65 to +150 500 UNITS V mA A mW °C °C/W MIN 30 TYP 0.40 0.26 0.32 0.42 0.49 15 MAX 50 UNITS µA V V V V 0.55 V pF R3 (8-January 2010) CMDSH2-3 SURFACE MOUNT HIGH CURRENT SILICON SCHOTTKY DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: S2 R3 (8-January 2010) w w w. c e n t r a l s e m i . c o m