CMDSH2-4L
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VF SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDSH2-4L is a
high current, low VF, 40 Volt Schottky diode packaged
in a space saving SOD-323 surface mount case. This
device has been designed for small signal general
purpose applications when small size and operational
efficiency are prime requirements.
MARKING CODE: S2L
SOD-323 CASE
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
40
UNITS
V
IF
200
mA
IFSM
PD
1.0
A
250
mW
TJ, Tstg
ΘJA
-65 to +150
°C
500
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IR
VR=20V
11
BVR
IR=100μA
40
53
MAX
50
UNITS
μA
VF
IF=10mA
0.24
0.325
V
VF
IF=100mA
0.35
0.4
V
VF
IF=200mA
0.42
0.5
V
CJ
VR=4.0V, f=1.0MHz
8.5
10
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100Ω
4.0
5.0
ns
V
R3 (13-November 2015)
CMDSH2-4L
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VF SCHOTTKY DIODE
SOD-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: S2L
R3 (13-November 2015)
w w w. c e n t r a l s e m i . c o m
CMDSH2-4L
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VF SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (13-November 2015)
w w w. c e n t r a l s e m i . c o m
CMDSH2-4L
SURFACE MOUNT SILICON
HIGH CURRENT
LOW VF SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (13-November 2015)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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