CMFSH-3I_10

CMFSH-3i SURFACE MOUNT DUAL, ISOLATED SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is designed fast switching applications requiring a low forward voltage drop. MARKING CODE: C3I SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA 30 100 200 750 350 -65 to +150 357 UNITS V mA mA mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR IR BVR VF VF VF CT trr VR=25V VR=25V, TA=100°C IR=100μA IF=2.0mA IF=15mA IF=100mA VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100Ω 90 25 30 0.29 0.40 0.74 7.0 5.0 0.33 0.45 1.00 500 100 UNITS nA μA V V V V pF ns R5 (13-August 2010) CMFSH-3i SURFACE MOUNT DUAL, ISOLATED SILICON SCHOTTKY DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONIGURATION LEAD CODE: 1) Cathode D1 2) Cathode D2 3) Anode D2 4) Anode D1 MARKING CODE: C3I R5 (13-August 2010) w w w. c e n t r a l s e m i . c o m