CMKD3003DO

CMKD3003DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD3003DO contains two (2) Isolated Opposing Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C303 SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 180 200 600 700 2.0 1.0 350 -65 to +150 357 UNITS V mA mA mA A A mW °C °C/W UNITS nA µA nA µA V V V V V V V pF ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=125V 1.0 IR VR=125V, TA=150°C 3.0 IR VR=180V 10 IR BVR VF VF VF VF VF VF CT VR=180V, TA=150°C IR=5.0µA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=200mA IF=300mA VR=0, f=1.0MHz 5.0 200 0.62 0.72 0.80 0.83 0.87 0.90 0.72 0.83 0.89 0.93 1.10 1.15 4.0 R0 (19-September 2011) CMKD3003DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: C303 R0 (19-September 2011) w w w. c e n t r a l s e m i . c o m