CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three (3) Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for applications requiring high speed switching applications. MARKING CODE: K48
SOT-363 CASE
MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 75 100 250 500 4.0 1.0 325 -65 to +150 385
UNITS V V mA mA A A mW °C °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR BVR BVR VF CT trr VR=20V IR=5.0μA IR=100μA IF=100mA VR=0, f=1.0MHz IR=IF=10mA, RL=100Ω Rec. to 1.0mA 25 75 100 1.0 4.0 4.0
UNITS nA V V V pF ns
R5 (13-January 2010)
CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES
SOT-363 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: K48
R5 (13-January 2010)
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