CMKD6001_10

CMKD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount package, designed for switching applications requiring extremely low leakage. MARKING CODE: K01 SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 75 100 250 500 4.0 1.0 250 -65 to +150 500 UNITS V V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR BVR VF VF VF CT trr VR=75V IR=100μA IF=1.0mA IF=10mA IF=100mA VR=0, f=1.0MHz IR=IF=10mA, RL=100Ω Rec. to 1.0mA 500 100 0.85 0.95 1.1 2.0 3.0 UNITS pA V V V V pF μs R4 (13-January 2010) CMKD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: K01 R4 (13-January 2010) w w w. c e n t r a l s e m i . c o m