CMKT2207
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
SOT-363 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2207
consists of one 2222A NPN transistor and an
individually isolated complementary 2907A PNP
transistor, manufactured by the epitaxial planar
process and epoxy molded in an SOT-363 surface
mount package. This ULTRAmini™ device has
been designed for small signal general purpose and
switching applications.
MARKING CODE: K70
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
NPN (Q1)
75
40
6.0
PNP (Q2)
60
60
5.0
UNITS
V
V
V
mA
mW
°C
°C/W
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=50V
10
ICBO
VCB=60V, TA=125°C
10
ICBO
VCB=50V, TA=125°C
10
IEBO
VEB=3.0V
10
ICEV
VCE=60V, VEB(OFF)=3.0V
10
ICEV
VCE=30V, VEB(OFF)=500mV
50
BVCBO
IC=10μA
75
60
BVCEO
IC=10mA
40
60
BVEBO
IE=10μA
6.0
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.0
1.6
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.0
2.6
hFE
VCE=10V, IC=0.1mA
35
75
hFE
VCE=10V, IC=1.0mA
50
100
hFE
VCE=10V, IC=10mA
75
100
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
50
fT
VCE=20V, IC=20mA, f=100MHz
300
fT
VCE=20V, IC=50mA, f=100MHz
200
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
-
UNITS
nA
nA
μA
μA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
R5 (26-January 2018)
CMKT2207
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
Cib
VEB=2.0V, IC=0, f=1.0MHz
30
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
150
NF
VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
4.0
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
40
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
80
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
UNITS
pF
kΩ
kΩ
x10-4
x10-4
μS
μS
ps
dB
ns
ns
ns
ns
ns
ns
ns
ns
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
MARKING CODE: K70
R5 (26-January 2018)
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OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
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Central’s applications engineering team is ready to discuss your design challenges. Just ask.
• Free quick ship samples (2nd day air)
• Special wafer diffusions
• Online technical data and parametric search
• PbSn plating options
• SPICE models
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• Application and design sample kits
• Customer specific screening
• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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