CMKT5089M10_10

CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5089M10 consists of two (2) individually isolated 5089 NPN silicon transistors with matched hFE. This ULTRAmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. The CMKT5089M10 has been designed for applications requiring high gain and low noise. MARKING CODE: C9M0 SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W UNITS nA nA V V V 0.5 0.8 400 450 400 50 4.0 10 450 1800 2.0 MIN 0.9 MAX 1.0 5.0 dB UNITS mV MHz pF pF 1200 V V SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 30 25 4.5 50 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=15V 50 IEBO VEB=4.5V 100 BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib hfe NF IC=100μA IC=1.0mA IE=100μA IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA VCE=5.0V, IC=0.1mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=500μA, f=20MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100μA, RS=1.0kΩ, f=10Hz to 15.7kHz MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS hFE1/hFE2 * VCE=5.0V, IC=1.0mA |VBE1-VBE2| VCE=5.0V, IC=100μA * The lowest hFE reading is taken as hFE1. 30 25 4.5 R4 (13-January 2010) CMKT5089M10 SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS SOT-363 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: C9M0 R4 (13-January 2010) w w w. c e n t r a l s e m i . c o m