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CMLD2004

CMLD2004

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMLD2004 - SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMLD2004 数据手册
CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package, designed for applications requiring high voltage capability. SOT-563 CASE The following configurations are available: CMLD2004 DUAL, ISOLATED CMLD2004A DUAL, COMMON ANODE CMLD2004C DUAL, COMMON CATHODE CMLD2004S DUAL, IN SERIES CMLD2004DO DUAL, ISOLATED OPPOSING MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µs Forward Surge Current, tp=1 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING MARKING SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg ΘJA CODE: CODE: CODE: CODE: CODE: 04D 04A 04C 04S 04O UNITS V V mA mA mA A A mW °C °C/W 240 300 200 225 625 4.0 1.0 250 -65 to +150 500 SYMBOL IR IR BVR VF CT trr ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VR=240V 100 VR=240V, TA=150°C IR=100µA IF=100mA VR=0, f=1.0 MHz IF=IR=30mA, Rec. to 3.0mA, RL=100Ω 300 1.0 5.0 50 100 UNITS nA µA V V pF ns R3 (04-June 2003) Central TM Semiconductor Corp. CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES SOT-563 CASE - MECHANICAL OUTLINE D E A 6 5 4 E B G F MARKING CODE: CMLD2004: 04D CMLD2004A: 04A CMLD2004C: 04C CMLD2004S: 04S CMLD2004DO: 04O 1 2 3 C H R0 Pin Configuration CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO LEAD CODE: 1) Anode D1 2) NC 3) Anode D2 4) Cathode D2 5) NC 6) Cathode D1 LEAD CODE: 1) NC 2) Anode D1, D2 3) NC 4) Cathode D2 5) NC 6) Cathode D1 LEAD CODE: 1) Cathode D1, 2) Cathode D1, 3) Anode D2 4) Anode D1 5) Cathode D1, 6) Cathode D1, D2 D2 LEAD CODE: 1) NC 2) NC 3) Anode D1, Cathode D2 4) Anode D2 5) NC 6) Cathode D1 LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 D2 D2 R3 (04-June 2003)
CMLD2004
1. 物料型号: - CMLD2004:双极隔离 - CMLD2004A:双极共阳极 - CMLD2004C:双极共阴极 - CMLD2004S:双极串联 - CMLD2004DO:双极隔离对向

2. 器件简介: CMLD2004系列由Central Semiconductor Corp.生产,包含两个高电压硅开关二极管,采用外延平面工艺制造,环氧树脂模塑在PICOmini™表面贴装封装中,设计用于需要高电压能力的应用程序。

3. 引脚分配: - CMLD2004C的引脚配置如下: 1) 无连接(NC) 2) D1阳极 3) D1阴极,D2阳极 4) D2阴极 5) 无连接(NC) 6) D1阴极,D2阴极

4. 参数特性: - 最大额定值(TA=25°C): - 连续反向电压:240V - 峰值重复反向电压:300V - 峰值重复反向电流:200mA - 连续正向电流:225mA - 峰值重复正向电流:625mA - 正向浪涌电流,tp=1us:4.0A - 正向浪涌电流,tp=1s:1.0A - 功率耗散:250mW - 工作和存储结温:-65至+150°C - 热阻:500°C/W

5. 功能详解应用信息: CMLD2004系列设计用于需要高电压能力的开关应用,例如电源转换、电机控制和高频电路保护。

6. 封装信息: - SOT-563封装,机械轮廓尺寸如下: - A: 0.10-0.18英寸(2.54-4.57mm) - B: 0.20英寸(5.08mm) - C: 0.56-0.60英寸(14.22-15.24mm) - D: 1.50-1.70英寸(38.10-43.18mm) - E: 0.50英寸(12.70mm) - F: 1.55-1.70英寸(39.37-43.18mm) - G: 1.20英寸(30.48mm) - H: 0.15-0.30英寸(3.81-7.62mm)
CMLD2004 价格&库存

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