CMLD2004A

厂商：
CENTRAL(中环)
封装：
描述：
CMLD2004A - SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES - Central Semiconductor Corp

数据手册：

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数据手册
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CMLD2004A 数据手册

CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package, designed for applications requiring high voltage capability. SOT-563 CASE The following configurations are available: CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO DUAL, DUAL, DUAL, DUAL, DUAL, ISOLATED COMMON ANODE COMMON CATHODE IN SERIES ISOLATED OPPOSING MARKING MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: CODE: 04D 04A 04C 04S 04O UNITS V V mA mA mA A A mW °C °C/W MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 240 300 200 225 625 4.0 1.0 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=240V 100 IR VR=240V, TA=150°C 100 BVR IR=100μA 300 VF IF=100mA 1.0 CT VR=0, f=1.0MHz 5.0 trr IF=IR=30mA, Rec. to 3.0mA, RL=100Ω 50 UNITS nA μA V V pF ns R4 (18-January 2010) CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES SOT-563 CASE - MECHANICAL OUTLINE MARKING CODES: CMLD2004: CMLD2004A: CMLD2004C: CMLD2004S: CMLD2004DO: PIN CONFIGURATIONS CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO 04D 04A 04C 04S 04O LEAD CODE: 1) Anode D1 2) NC 3) Anode D2 4) Cathode D2 5) NC 6) Cathode D1 LEAD CODE: 1) NC 2) Anode D1, D2 3) NC 4) Cathode D2 5) NC 6) Cathode D1 LEAD CODE: 1) Cathode D1, 2) Cathode D1, 3) Anode D2 4) Anode D1 5) Cathode D1, 6) Cathode D1, D2 D2 D2 D2 LEAD CODE: 1) NC 2) NC 3) Anode D1, Cathode D2 4) Anode D2 5) NC 6) Cathode D1 LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 R4 (18-January 2010) w w w. c e n t r a l s e m i . c o m

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CMLD2004A

物料型号： - CMLD2004 - CMLD2004A - CMLD2004C - CMLD2004S - CMLD2004DO

器件简介： CENTRAL SEMICONDUCTOR生产的CMLD2004系列包含两个高电压硅开关二极管，采用外延平面工艺制造，环氧树脂模塑在PICOmini™表面贴装封装中，设计用于需要高电压能力的应用程序。

引脚分配： - CMLD2004A：1) 阳极D1, D2; 3) 阳极D2; 4) 阴极D2; 6) 阴极D1 - CMLD2004C：1) 阳极D1; 2) 阴极D1, D2; 3) 阳极D2; 4) 阴极D2 - CMLD2004S：1) 空脚; 3) 阳极D1; 4) 阳极D2; 6) 阴极D1 - CMLD2004DO：1) 阳极D1; 3) 阴极D2; 4) 阳极D2; 6) 阴极D1

参数特性： - 最大额定反向连续电压(VR)：240V - 峰值重复反向电压(VRRM)：300V - 峰值重复反向电流(IFRM)：625mA - 峰值正向浪涌电流(IFSM)：1.0A（tp=1.0s）和4.0A（tp=1.0μs） - 功率耗散(PD)：250mW - 工作和存储结温(TJ, Tstg)：-65至+150°C - 热阻(ΘJA)：500°C/W

功能详解：每个二极管的电气特性如下： - 反向漏电流(IR)在100μA时的反向电压(BVR)：100nA至1.0V - 正向电压降(VF)在100mA时：1.0V - 截止电压(VR)在0时的电容(CT)：5.0pF（1.0MHz） - 存储时间(trr)：50ns

应用信息：适用于需要高电压能力的开关和整流应用。

封装信息： SOT-563封装，具体尺寸和机械轮廓在PDF中有详细描述。

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