CMLD4448_10

CMLD4448 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD4448 type contains two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for high speed switching applications. MARKING CODE: C48 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 120 250 500 4.0 1.0 250 -65 to +150 500 UNITS V mA mA A A mW °C °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V 300 IR IR BVR VF VF VF CT trr VR=50V, TA=125°C VR=100V IR=100μA IF=1.0mA IF=10mA IF=100mA VR=0, f=1.0MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 2.0 120 0.55 0.67 0.85 150 0.59 0.72 0.91 0.65 0.77 1.0 1.5 4.0 100 500 UNITS nA μA nA V V V V pF ns R3 (18-January 2010) CMLD4448 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Anode D2 4) Cathode D2 5) NC 6) Cathode D1 MARKING CODE: C48 R3 (18-January 2010) w w w. c e n t r a l s e m i . c o m