CMLDM3757

CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: 3C7 SOT-563 CASE • Device is Halogen Free by design APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS BVDSS VGS(th) VSD rDS(ON) rDS(ON) rDS(ON) rDS(ON) rDS(ON) rDS(ON) VDS=16V, VGS=0 VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=0, IS=350mA VGS=4.5V, ID=540mA VGS=4.5V, ID=430mA VGS=2.5V, ID=500mA VGS=2.5V, VGS=1.8V, VGS=1.8V, ID=300mA ID=350mA ID=150mA FEATURES: • ESD Protection up to 2kV • 350mW Power Dissipation • Very Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-563 Surface Mount Package SYMBOL N-CH (Q1) VDS 20 VGS ID IDM PD PD PD TJ, Tstg ΘJA N-CH (Q1) MIN MAX 5.0 20 0.45 1.0 1.0 1.2 0.55 0.7 0.9 8.0 540 1500 350 300 150 -65 to +150 357 P-CH (Q2) MIN MAX 2.0 20 0.45 1.0 1.0 1.2 0.9 1.2 2.0 430 750 P-CH (Q2) UNITS V V mA mA mW mW mW °C °C/W UNITS μA μA V V V Ω Ω Ω Ω Ω Ω Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R1 (22-September 2010) CMLDM3757 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS QG(TOT) VDS=10V, VGS=4.5V, ID=500mA QG(TOT) VDS=10V, VGS=4.5V, ID=200mA QGS VDS=10V, VGS=4.5V, ID=500mA QGS VDS=10V, VGS=4.5V, ID=200mA QGD VDS=10V, VGS=4.5V, ID=500mA QGD VDS=10V, VGS=4.5V, ID=200mA Crss VDS=16V, VGS=0, f=1.0MHz Ciss VDS=16V, VGS=0, f=1.0MHz Coss VDS=16V, VGS=0, f=1.0MHz ton VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω toff VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω ton VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω toff VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω N-CH (Q1) TYP MAX 1.58 0.17 0.24 20 150 25 10 25 P-CH (Q2) TYP MAX 1.2 0.24 0.36 20 175 30 22 55 - UNITS nC nC nC nC nC nC pF pF pF ns ns ns ns SOT-563 - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) SOURCE Q1 2) GATE Q1 3) DRAIN Q2 4) SOURCE Q2 5) GATE Q2 6) DRAIN Q1 MARKING CODE: 3C7 R1 (22-September 2010) w w w. c e n t r a l s e m i . c o m