CMLDM3757TR

CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: 3C7 SOT-563 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable devices FEATURES: • ESD protection up to 1800V (Human Body Model) • 350mW power dissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-563 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL N-CH (Q1) P-CH (Q2) VDS 20 VGS 8.0 Gate-Source Voltage UNITS V V Continuous Drain Current (Steady State) ID 540 430 mA Maximum Pulsed Drain Current (tp=10μs) IDM PD 1500 750 mA Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature TJ, Tstg ΘJA Thermal Resistance (Note 1) ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS VDS=16V, VGS=0 BVDSS VGS(th) VSD rDS(ON) rDS(ON) VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=0, IS=350mA VGS=4.5V, ID=540mA N-CH (Q1) MIN TYP MAX 5.0 mW 300 mW 150 mW -65 to +150 °C 357 °C/W P-CH (Q2) MIN TYP MAX 2.0 UNITS μA - - 1.0 - - 1.0 20 - - 20 - - V 0.45 - 1.0 0.45 - 1.0 V - 1.2 - - 1.2 V 0.35 0.55 - - - Ω - μA ID=430mA - - - - 0.4 0.9 Ω - 0.5 0.7 - - - Ω rDS(ON) ID=500mA VGS=2.5V, ID=300mA - - - - 0.55 1.2 Ω rDS(ON) VGS=1.8V, ID=350mA - 0.7 0.9 - - - Ω rDS(ON) VGS=1.8V, ID=150mA - - - - 0.75 2.0 Ω rDS(ON) VGS=4.5V, VGS=2.5V, 350 PD PD Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R6 (8-June 2015) CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS Crss VDS=16V, VGS=0, f=1.0MHz Ciss VDS=16V, VGS=0, f=1.0MHz Coss VDS=16V, VGS=0, f=1.0MHz Qg(tot) VDS=10V, VGS=4.5V, ID=500mA Qg(tot) VDS=10V, VGS=4.5V, ID=200mA Qgs VDS=10V, VGS=4.5V, ID=500mA Qgs VDS=10V, VGS=4.5V, ID=200mA Qgd VDS=10V, VGS=4.5V, ID=500mA Qgd VDS=10V, VGS=4.5V, ID=200mA ton VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω toff VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω ton VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω toff VDD=10V, VGS=4.5V, ID=215mA, RG=10Ω N-CH (Q1) TYP MAX 20 150 25 1.58 0.17 0.24 10 25 - P-CH (Q2) TYP MAX 20 175 30 1.2 0.24 0.36 38 48 - UNITS pF pF pF nC nC nC nC nC nC ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 3C7 R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET N-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m CMLDM3757 SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFET P-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). 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