CMLDM7002AJ

厂商：
CENTRAL(中环)
封装：
描述：
CMLDM7002AJ - SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET - Central Semico...

数据手册：

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数据手册
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CMLDM7002AJ 数据手册

CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7002A and CMLDM7002AJ are special dual versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout configuration, while the CMLDM7002AJ utilizes the Japanese pinout configuration. These special Dual Transistor devices offer low rDS(ON) and low VDS (ON). MARKING CODE: CMLDM7002A: L02 CMLDM7002AJ: 02J SYMBOL VDS VDG VGS ID IS IDM ISM PD PD PD TJ,Tstg ΘJA 60 60 40 280 280 1.5 1.5 350 300 150 -65 to +150 357 UNITS V V V mA mA A A mW (Note 1) mW (Note 2) mW (Note 3) °C °C/W SOT-563 CASE MAXIMUM RATINGS (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Power Dissipation Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER TRANSISTOR (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF VGS=20V, VDS=0V 100 IGSSR VGS=20V, VDS=0V 100 IDSS VDS=60V, VGS=0V 1.0 IDSS VDS=60V, VGS=0V, Tj=125°C 500 ID(ON) VGS=10V, VDS ≥ 2VDS(ON) 500 BVDSS VGS=0V, ID=10µA 60 VGS(th) VDS=VGS, ID=250µA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.0 VDS(ON) VGS=5.0V, ID=50mA 0.15 rDS(ON) VGS=10V, ID=500mA 2.0 rDS(ON) VGS=10V, ID=500mA, Tj=125°C 3.5 rDS(ON) VGS=5.0V, ID=50mA 3.0 rDS(ON) VGS=5.0V, ID=50mA, Tj=125°C 5.0 gFS VDS ≥ 2VDS(ON), ID=200mA 80 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2 UNITS nA nA µA µA mA V V V V Ω Ω Ω Ω mmhos R3 (19-December 2003) Central TM CMLDM7002A CMLDM7002AJ SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Semiconductor Corp. ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS Crss VDS=25V, VGS=0, f=1.0MHz 5.0 pF Ciss VDS=25V, VGS=0, f=1.0MHz 50 pF Coss VDS=25V, VGS=0, f=1.0MHz 25 pF ton VDD=30V, VGS=10V, ID=200mA, 20 ns toff RG=25Ω, RL=150Ω 20 ns VSD VGS=0V, IS=400mA 1.2 V SOT-563 CASE - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 CMLDM7002A (USA Pinout) CMLDM7002AJ (Japanese Pinout) LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) DRAIN Q2 4) GATE Q2 5) SOURCE Q2 6) DRAIN Q1 MARKING CODE: L02 LEAD CODE: 1) SOURCE Q1 2) GATE Q1 3) DRAIN Q2 4) SOURCE Q2 5) GATE Q2 6) DRAIN Q1 MARKING CODE: 02J R3 (19-December 2003)

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CMLDM7002AJ

1. 物料型号： - CMLDM7002A：采用美国引脚配置的双N沟道增强型硅MOSFET。 - CMLDM7002AJ：采用日本引脚配置的双N沟道增强型硅MOSFET。

2. 器件简介： - CMLDM7002A和CMLDM7002AJ是2N7002增强型N沟道场效应晶体管的特殊双版本，由N沟道DMOS工艺制造，设计用于高速脉冲放大器和驱动应用。

3. 引脚分配： - CMLDM7002A（美国引脚配置）：1）源极Q1，2）栅极Q1，3）漏极Q2，4）栅极Q2，5）源极Q2，6）漏极Q1。 - CMLDM7002AJ（日本引脚配置）：1）栅极Q1，2）源极Q1，3）漏极Q2，4）源极Q2，5）栅极Q2，6）漏极Q1。

4. 参数特性： - 最大额定值（Ta=25°C）： - 漏源电压：VDs = 60V - 漏栅电压：VDG = 60V - 栅源电压：VGS = 40V - 连续漏电流：ID = 280mA - 连续源电流（体二极管）：Ichi Is = 280mA - 最大脉冲漏电流：DM = 1.5A - 最大脉冲源电流：ISM = 1.5A - 功率耗散：PD = 350mW（注1），300mW（注2），150mW（注3）

5. 功能详解： - 这些特殊的双晶体管设备提供了低DS(ON)和低vDS(ON)特性，适用于高速脉冲放大器和驱动应用。

6. 应用信息： - 适用于需要高速响应和低导通电阻的应用，例如电源管理、电机控制和高速信号处理。

7. 封装信息： - SOT-563封装，具体尺寸和机械轮廓图已提供在文档中。

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