CMLDM7003TGTR

CMLDM7003TG SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV. MARKING CODE: CTG SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IDM PD PD PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=5.0V IGSSF, IGSSR VGS=10V IGSSF, IGSSR VGS=12V IDSS VDS=50V, VGS=0 BVDSS VGS=0, ID=10μA 50 VGS(th) VDS=VGS, ID=250μA 0.7 VSD VGS=0, IS=115mA rDS(ON) VGS=1.8V, ID=50mA rDS(ON) VGS=2.5V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz Qg(tot) VDS=25V, VGS=4.5V, ID=100mA Qgs VDS=25V, VGS=4.5V, ID=100mA Qgd VDS=25V, VGS=4.5V, ID=100mA UNITS V V V mA A mW mW mW °C °C/W 50 50 12 280 1.5 350 300 150 -65 to +150 357 unless otherwise noted) TYP MAX 50 0.5 1.0 50 1.6 1.3 1.1 1.2 1.4 2.3 1.9 1.5 5.0 60 25 0.764 0.148 0.156 UNITS nA μA μA nA V V V Ω Ω Ω mS pF pF pF nC nC nC Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R6 (28-September 2021) CMLDM7003TG SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 MARKING CODE: CTG R6 (28-September 2021) w w w. c e n t r a l s e m i . c o m CMLDM7003TG SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R6 (28-September 2021) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)