CMLDM8002AGTR

CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SOT-563 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual chip P-Channel enhancement-mode MOSFETs, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM8002A utilizes the USA pinout configuration, while the CMLDM8002AJ, utilizing the Japanese pinout configuration, is available as a special order. These special dual transistor devices offer low rDS(on) and low VDS(on). * Device is Halogen Free by design MARKING CODES: CMLDM8002A: C08 CMLDM8002AG*: CG8 CMLDM8002AJ: CJ8 APPLICATIONS: FEATURES: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment • • • • MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IS IDM ISM PD PD PD TJ, Tstg ΘJA Dual Chip Device Low rDS(on) Low VDS(on) Low Threshold Voltage • Fast Switching • Logic Level Compatible • Small SOT-563 package 50 50 20 280 280 1.5 1.5 350 300 150 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=50V, VGS=0 1.0 IDSS VDS=50V, VGS=0, TJ=125°C 500 ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 50 VGS(th) VDS=VGS, ID=250μA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.5 VDS(ON) VSD VGS=5.0V, ID=50mA VGS=0, IS=115mA Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 0.15 1.3 UNITS V V V mA mA A A mW mW mW °C °C/W UNITS nA μA μA mA V V V V V R7 (8-June 2015) CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS ELECTRICAL SYMBOL rDS(ON) rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton, toff CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX UNITS VGS=10V, ID=500mA 2.5 Ω VGS=10V, ID=500mA, TJ=125°C 4.0 Ω VGS=5.0V, ID=50mA 3.0 Ω VGS=5.0V, ID=50mA, TJ=125°C 5.0 Ω VDS =10V, ID=200mA 200 mS VDS=25V, VGS=0, f=1.0MHz 7.0 pF VDS=25V, VGS=0, f=1.0MHz 70 pF VDS=25V, VGS=0, f=1.0MHz 15 pF VDS=25V, VGS=4.5V, ID=100mA 0.72 nC VDS=25V, VGS=4.5V, ID=100mA 0.25 nC VDS=25V, VGS=4.5V, ID=100mA 0.16 nC VDD=30V, VGS=10V, ID=200mA RG=25Ω, RL=150Ω 20 ns SOT-563 CASE - MECHANICAL OUTLINE CMLDM8002A (USA Pinout) CMLDM8002AG* CMLDM8002AJ (Japanese Pinout) LEAD CODE: 1) Gate Q1 2) Source Q1 3) Drain Q2 4) Gate Q2 5) Source Q2 6) Drain Q1 LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODES: CMLDM8002A: C08 CMLDM8002AG*: CG8 MARKING CODE: CJ8 * Device is Halogen Free by design R7 (8-June 2015) w w w. c e n t r a l s e m i . c o m CMLDM8002A CMLDM8002AG* CMLDM8002AJ SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS TYPICAL ELECTRICAL CHARACTERISTICS R7 (8-June 2015) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)