CMLDM8005

CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CC8 FEATURES: • ESD Protection up to 2kV • 350mW Power Dissipation • Very Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-563 Surface Mount Package • Complementary Dual N-Channel Device: CMLDM7005 SYMBOL VDS VGS ID IS IDM PD PD PD TJ, Tstg ΘJA UNITS V V mA mA A mW mW mW °C °C/W SOT-563 CASE APPLICATIONS: • Load Switch / Level Shifting • Battery Charging • Boost Switch • Electro-luminescent Backlighting MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State - Note 1) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) 20 8.0 650 250 1.0 350 300 150 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=4.5V, VDS=0 10 IDSS VDS=16V, VGS=0 100 BVDSS VGS(th) VSD rDS(ON) rDS(ON) rDS(ON) VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=0, IS=250mA VGS=4.5V, ID=350mA VGS=2.5V, ID=300mA VGS=1.8V, ID=150mA 20 0.5 0.25 0.37 1.0 1.1 0.36 0.5 0.8 UNITS μA nA V V V Ω Ω Ω Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R3 (27-September 2011) CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP UNITS Qg(tot) VDS=10V, VGS=4.5V, ID=200mA 1.2 nC Qgs VDS=10V, VGS=4.5V, ID=200mA 0.24 nC Qgd VDS=10V, VGS=4.5V, ID=200mA 0.36 nC gFS Crss Ciss Coss ton toff VDS=10V, ID=200mA VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 0.2 25 100 21 38 48 S pF pF pF ns ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CC8 R3 (27-September 2011) w w w. c e n t r a l s e m i . c o m