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CMLDM8005TR

CMLDM8005TR

  • 厂商:

    CENTRAL(中环)

  • 封装:

    SOT-563

  • 描述:

    MOSFET2P-CH20V0.65ASOT563

  • 详情介绍
  • 数据手册
  • 价格&库存
CMLDM8005TR 数据手册
CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: CC8 APPLICATIONS: • Load switch/Level shifting • Battery charging • Boost switch • Electro-luminescent backlighting FEATURES: • ESD protection up to 1800V (Human Body Model) • 350mW power dissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-563 surface mount package • Complementary dual N-Channel device: CMLDM7005 MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS 20 VGS ID 8.0 V 650 mA IS IDM PD 250 mA 1.0 A 350 mW PD PD 300 mW 150 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W SOT-563 CASE Gate-Source Voltage Continuous Drain Current (Steady State - Note 1) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) UNITS V ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=4.5V, VDS=0 10 IDSS VDS=16V, VGS=0 100 BVDSS VGS(th) VGS=0, ID=250μA VDS=VGS, ID=250μA VSD rDS(ON) VGS=0, IS=250mA VGS=4.5V, ID=350mA rDS(ON) VGS=2.5V, ID=300mA VGS=1.8V, ID=150mA rDS(ON) 20 UNITS μA nA V 0.5 1.0 0.25 0.37 V 1.1 V 0.36 Ω 0.5 Ω 0.8 Ω Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R6 (8-June 2015) CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP UNITS gFS VDS=10V, ID=200mA 0.2 S Crss VDS=16V, VGS=0, f=1.0MHz 25 pF Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, VDS=10V, VGS=4.5V, ID=200mA ID=200mA ID=200mA VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 100 pF 21 pF 1.2 nC 0.24 nC 0.36 38 nC ns 48 ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CC8 R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R6 (8-June 2015) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)
CMLDM8005TR
物料型号:CMLDM8005

器件简介: - 该器件包含两个P沟道增强型硅MOSFET,设计用于高速脉冲放大器和驱动应用。 - 提供非常低的导通电阻(rDS(ON))和低阈值电压。

引脚分配: - 引脚1:Q1的源极 - 引脚2:Q1的栅极 - 引脚3:Q2的漏极 - 引脚4:Q2的源极 - 引脚5:Q2的栅极 - 引脚6:Q1的漏极

参数特性: - 最大漏源电压(VDs):20V - 最大栅源电压(VGS):8.0V - 连续漏电流(稳态):650mA - 连续源电流(体二极管):250mA - 最大脉冲漏电流:1.0A - 功率耗散:350mW(注意1) - 工作和存储结温:-65至+150°C - 热阻:357°C/W

功能详解: - 具有高达1800V的ESD保护(人体模型) - 逻辑电平兼容 - 小型,SOT-563表面安装封装 - 互补的双N沟道器件:CMLDM7005

应用信息: - 适用于负载开关/电平转换、电池充电、升压开关、电致发光背光等应用。

封装信息: - SOT-563封装,尺寸和引脚配置详细说明。
CMLDM8005TR 价格&库存

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