CMLM0205_10

CMLM0205 Multi Discrete Module ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: N-Channel MOSFET and Low VF Schottky Diode. MARKING CODE: C25 SYMBOL PD TJ, Tstg ΘJA SYMBOL VDS VDG VGS ID IS IDM ISM SYMBOL VRRM IF IFRM IFSM 350 -65 to +150 357 UNITS mW °C °C/W UNITS V V V mA mA A A UNITS V mA A A SOT-563 CASE MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms 60 60 40 280 280 1.5 1.5 40 500 3.5 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=60V, VGS=0 1.0 IDSS VDS=60V, VGS=0, TJ=125°C 500 ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 60 VGS(th) VDS=VGS, ID=250μA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.0 VDS(ON) VGS=5.0V, ID=50mA 0.15 VSD VGS=0, IS=400mA 1.2 rDS(ON) VGS=10V, ID=500mA 2.0 rDS(ON) VGS=10V, ID=500mA, TJ=125°C 3.5 UNITS nA μA μA mA V V V V V Ω Ω R1 (18-January 2010) CMLM0205 Multi Discrete Module ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL rDS(ON) rDS(ON) gFS Crss Ciss Coss ton / toff TEST CONDITIONS VGS=5.0V, ID=50mA VGS=5.0V, ID=50mA, TJ=125°C VDS=10V, ID=200mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA RG=25Ω, RL=150Ω MIN MAX 3.0 5.0 5.0 50 25 20 UNITS Ω Ω mS pF pF pF ns 80 ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500μA VF IF=100μA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz 20 100 40 0.13 0.21 0.27 0.35 0.47 50 μA μA V V V V V V pF SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODE: C25 R1 (18-January 2010) w w w. c e n t r a l s e m i . c o m