CMLM0305G

CMLM0305 CMLM0305G* Multi Discrete Module ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0305 and CMLM0305G are Multi Discrete Modules™ consisting of a single N-Channel Enhancement-mode MOSFET and a Low VF Schottky diode packaged in a space saving PICOmini™ SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODES: CMLM0305: 5C3 CMLM0305G*: 5CG SOT-563 CASE * Device is Halogen Free by design FEATURES: • ESD protection up to 2kV • Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V) • Low VF Schottky Diode (0.47V MAX @ 0.5A) SYMBOL PD PD PD TJ, Tstg ΘJA SYMBOL VDS VDG VGS ID IDM SYMBOL VRRM IF IFRM IFSM 350 300 150 -65 to +150 357 UNITS mW mW mW °C °C/W UNITS V V V mA A UNITS V mA A A APPLICATIONS: • DC / DC Converters • Battery Powered Portable Equipment MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms 50 50 12 280 1.5 40 500 3.5 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=5.0V 100 IGSSF, IGSSR VGS=10V 2.0 IGSSF, IGSSR VGS=12V 2.0 IDSS VDS=50V, VGS=0 50 50 BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA 0.49 1.0 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 UNITS nA μA μA nA V V R3 (18-January 2010) CMLM0305 CMLM0305G* Multi Discrete Module ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN VSD VGS=0, IS=115mA rDS(ON) VGS=1.8V, ID=50mA rDS(ON) VGS=2.5V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA gFS VDS=10V, ID=200mA 200 Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500μA VF IF=100μA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz TYP 1.6 1.3 1.1 MAX 1.4 3.0 2.5 2.0 5.0 50 25 UNITS V Ω Ω Ω mS pF pF pF 20 100 40 0.13 0.21 0.27 0.35 0.47 50 μA μA V V V V V V pF SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate Q1 2) Source Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Drain Q1 MARKING CODES: CMLM0305: 5C3 CMLM0305G*: 5CG * Device is Halogen Free by design R3 (18-January 2010) w w w. c e n t r a l s e m i . c o m