CMLM0605_10

CMLM0605 MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0605 is a single PNP Transistor and Schottky Diode packaged in a space saving SOT-563 case is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Complementary Device: CMLM0405 • Combination Low VCE(SAT) Transistor and Low VF Schottky Diode. SOT-563 CASE MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms MARKING CODE: C65 SYMBOL PD TJ, Tstg ΘJA SYMBOL VCBO VCEO VEBO IC SYMBOL VRRM IF IFRM IFSM UNITS mW °C °C/W UNITS V V V mA UNITS V mA A A 350 -65 to +150 357 60 40 6.0 200 40 500 3.5 10 ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=30V, VEB=3.0V BVCBO IC=10μA 60 96 BVCEO IC=1.0mA 40 63 BVEBO IE=10μA 6.0 8.0 VCE(SAT) IC=10mA, IB=1.0mA 0.050 VCE(SAT) IC=50mA, IB=5.0mA 0.100 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 VBE(SAT) IC=50mA, IB=5.0mA 0.85 hFE VCE=1.0V, IC=0.1mA 90 130 hFE VCE=1.0V, IC=1.0mA 100 140 hFE VCE=1.0V, IC=10mA 100 150 hFE VCE=1.0V, IC=50mA 70 130 hFE VCE=1.0V, IC=100mA 30 90 fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz MAX 50 0.100 0.200 0.85 0.95 UNITS nA V V V V V V V 300 4.0 8.0 12 10 MHz pF pF kΩ X10-4 R2 (18-January 2010) CMLM0605 MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 NF VCE=5.0V, IC=100μA, RS=1.0KΩ, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500μA VF IF=100μA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz MAX 400 60 4.0 35 35 200 50 UNITS μS dB ns ns ns ns 20 100 40 0.13 0.21 0.27 0.35 0.47 50 μA μA V V V V V V pF SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Collector Q1 MARKING CODE: C65 R2 (18-January 2010) w w w. c e n t r a l s e m i . c o m