CMLM0705_10

CMLM0705 MULTI DISCRETE MODULE ™ SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0705 is a Multi Discrete Module™ consisting of a single PNP Transistor and a Schottky Diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: Small Signal Switching PNP Transistor and Low VF Schottky Diode. • Complementary Device: C MLM2205 MARKING CODE: C75 SYMBOL PD TJ, Tstg ΘJA SYMBOL VCBO VCEO VEBO IC SYMBOL VRRM IF IFRM IFSM 350 -65 to +150 357 90 60 6.0 600 40 500 3.5 10 UNITS mW °C °C/W UNITS V V V mA UNITS V mA A A SOT-563 CASE MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp≤1.0ms Peak Forward Surge Current, tp = 8.0ms ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=50V ICBO VCB=50V, TA=125°C ICEV VCE=30V, VBE=0.5V BVCBO IC=10µA 90 115 BVCEO IC=10mA 60 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.113 VCE(SAT) IC=500mA, IB=50mA 0.280 VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 100 205 hFE VCE=10V, IC=1.0mA 100 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 75 110 MAX 10 10 50 0.2 0.7 1.3 2.6 UNITS nA µA nA V V V V V V V 300 R1 (18-January 2010) CMLM0705 MULTI DISCRETE MODULE ™ SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS fT VCE=20V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA toff VCC=6.0V, IC=150mA, IB1=IB2=15mA ts VCC=6.0V, IC=150mA, IB1=IB2=15mA tf VCC=6.0V, IC=150mA, IB1=IB2=15mA ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500µA VF IF=100µA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz MIN 200 MAX 8.0 30 45 10 40 100 80 30 20 100 UNITS MHz pF pF ns ns ns ns ns ns µA µA V V V V V V pF 40 0.13 0.21 0.27 0.35 0.47 50 SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Collector Q1 MARKING CODE: C75 R1 (18-January 2010) w w w. c e n t r a l s e m i . c o m