CMLM2205_10

CMLM2205 MULTI DISCRETE MODULE ™ SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM2205 is a Multi Discrete Module™ consisting of a single NPN Transistor and Schottky Diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: Small Signal Switching NPN Transistor and Low VF Schottky Diode. SOT-563 CASE • Complementary Device: CMLM0705 MARKING CODE: C22 MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤1.0ms Peak Forward Surge Current, tp = 8.0ms SYMBOL PD TJ, Tstg ΘJA SYMBOL VCBO VCEO VEBO IC SYMBOL VRRM IF IFRM IFSM 350 -65 to +150 357 100 45 6.0 600 40 500 3.5 10 UNITS mW °C °C/W UNITS V V V mA UNITS V mA A A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=60V ICBO VCB=60V, TA=125 °C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10μA 100 145 BVCEO IC=10mA 45 53 BVEBO IE=10μA 6.0 0.09 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA 0.12 VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA 100 210 hFE VCE=10V, IC=1.0mA 100 205 hFE VCE=10V, IC=10mA 100 205 hFE VCE=1.0V, IC=150mA 75 150 hFE VCE=10V, IC=150mA 100 hFE VCE=10V, IC=500mA 60 130 MAX 10 10 10 10 0.15 0.50 1.2 2.0 UNITS nA μA nA nA V V V V V V V 300 R2 (18-January 2010) CMLM2205 MULTI DISCRETE MODULE ™ SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz NF VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz td VCC=30V, VBE=0.5, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5, IC=150mA, IB1=15mA ts VCC=30V, IC=150mA, IB1=IB215mA tf VCC=30V, IC=150mA, IB1=IB2=15mA ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500μA VF IF=100μA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz MAX 8.0 25 4.0 10 25 225 60 UNITS MHz pF pF dB ns ns ns ns 20 100 40 0.13 0.21 0.27 0.35 0.47 50 μA μA V V V V V V pF SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Collector Q1 MARKING CODE: C22 R2 (18-January 2010) w w w. c e n t r a l s e m i . c o m