CMLM7388

CMLM7388 MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW NOISE NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM7388 is a Multi Discrete Module™ consisting of a single N-Channel Enhancement-mode MOSFET and a Low Noise NPN transistor packaged in a space saving PICOmini™ SOT-563 surface mount case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. MARKING CODE: 7C8 FEATURES: • ESD protection up to 2kV • Low rDS(on) MOSFET • Low VCE(SAT) NPN Transistor SOT-563 CASE • Devices are Halogen Free by design APPLICATIONS: • DC / DC Converters • Battery Powered Portable Equipment MAXIMUM RATINGS (SOT-563 Package): (TA=25°C) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current MAXIMUM RATINGS Q2: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL PD PD PD TJ, Tstg ΘJA SYMBOL VDS VGS ID IDM SYMBOL VCBO VCEO VEBO IC 350 300 150 -65 to +150 357 UNITS mW mW mW °C °C/W UNITS V V mA mA UNITS V V V mA 50 12 160 560 50 45 6.0 100 ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=8.0V, VDS=0V IGSSF, IGSSR VGS=12V, VDS=0V IDSS VDS=50V, VGS=0V BVDSS VGS(th) rDS(ON) rDS(ON) gFS Notes: TYP MAX 1.0 5.0 10 1.0 4.0 5.0 UNITS μA μA μA V V Ω Ω mS VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=4.0V, ID=100mA VGS=2.5V, ID=80mA VDS=10V, ID=100mA 50 0.7 180 (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2 R0 (1-December 2009) CMLM7388 MULTI DISCRETE MODULE ™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW NOISE NPN TRANSISTOR ELECTRICAL CHARACTERISTICS Q1 - Continued: SYMBOL TEST CONDITIONS Crss VDS=10V, VGS=0, f=1.0MHz Ciss VDS=10V, VGS=0, f=1.0MHz Coss VDS=10V, VGS=0, f=1.0MHz ELECTRICAL CHARACTERISTICS Q2: (TA=25°C) ICBO VCB= 30V BVCBO IC= 10μA BVCEO IC= 10mA BVEBO IE= 1.0μA VCE(SAT) IC= 10mA, IB= 0.5mA VCE(SAT) IC= 100mA, IB= 5.0mA VBE(SAT) IC= 10mA, IB= 0.5mA VBE(SAT) IC= 100mA, IB= 5.0mA VBE(on) VCE= 5.0V, IC= 2.0mA VBE(on) VCE= 5.0V, IC= 10mA hFE VCE= 5.0V, IC= 2.0mA fT VCE= 5.0V, IC=10mA, f=100MHz Cob VCB= 10V, IE=0, f=1.0MHz NF VCE= 5.0V, RS=2kΩ f=1.0kHz, BW=200Hz MIN TYP 2.1 25 5.0 MAX UNITS pF pF pF 15 50 45 6.0 100 300 700 900 580 200 100 700 770 450 4.5 10 nA V V V mV mV mV mV mV mV MHz pF dB SOT-563 - MECHANICAL OUTLINE LEAD CODE: 1) SOURCE Q1 2) GATE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) DRAIN Q1 MARKING CODE: 7C8 R0 (1-December 2009) w w w. c e n t r a l s e m i . c o m