CMLM7405

CMLM7405 MULTI DISCRETE MODULE ™ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM7405 is a single PNP Transistor and Schottky Diode packaged in a space saving SOT-563 case is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Complementary Device: CMLM3405 • Combination High Current Low VCE (SAT) Transistor and Low VF Schottky Diode. SOT-563 CASE MARKING CODES: C57 SYMBOL PD TJ, Tstg ΘJA SYMBOL VCBO VCEO VEBO IC ICM SYMBOL VRRM IF IFRM IFSM UNITS mW °C °C/W UNITS V V V A A UNITS V mA A A MAXIMUM RATINGS (SOT-563 Package): (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) MAXIMUM RATINGS D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤ 1 ms Forward Surge Current, tp = 8ms 350 -65 to +150 357 40 25 6.0 1.0 1.5 40 500 3.5 10 ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) TEST CONDITIONS VCB=40V VEB=6.0V IC=100µA IC=10mA IE=100µA IC=50mA, IB=5.0mA IC=100mA, IB=10mA IC=200mA, IB=20mA IC=500mA, IB=50mA IC=800mA, IB=80mA IC=1.0A, IB=100mA IC=800mA, IB=80mA VCE=1.0V, IC=10mA MIN TYP MAX 100 100 UNITS nA nA V V V mV mV mV mV mV mV V V 40 25 6.0 25 40 80 150 220 275 50 75 150 250 400 450 1.1 0.9 R0 (23-March 2005) CMLM7405 Central TM MULTI DISCRETE MODULE ™ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE MIN 100 100 100 50 100 MAX 300 UNITS Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL TEST CONDITIONS hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=100mA hFE VCE=1.0V, IC=500mA hFE VCE=1.0V, IC=1.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz ELECTRICAL CHARACTERISTICS D1 (TA=25°C) IR VR= 10V IR VR= 30V BVR IR= 500µA VF IF= 100µA VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz 15 MHz pF 20 100 40 0.13 0.21 0.27 0.35 0.47 50 µA µA V V V V V V pF SOT-563 - MECHANICAL OUTLINE D E A 6 5 4 E B G F 1 2 3 C H R0 MARKING CODE: C57 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) COLLECTOR Q1 R0 (23-March 2005)