CMLM7405_10

CMLM7405 MULTI DISCRETE MODULE ™ SURFACE MOUNT HIGH CURRENT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM7405 is a single PNP Transistor and Schottky Diode packaged in a space saving SOT-563 case is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Complementary Device: CMLM3405 • Combination High Current Low VCE(SAT) Transistor and Low VF Schottky Diode. SOT-563 CASE MAXIMUM RATINGS - Case: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS - Q1: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current MAXIMUM RATINGS - D1: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp ≤1.0ms Peak Forward Surge Current, tp = 8.0ms ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) MARKING CODE: C57 SYMBOL PD TJ, Tstg ΘJA SYMBOL VCBO VCEO VEBO IC ICM SYMBOL VRRM IF IFRM IFSM 350 -65 to +150 357 UNITS mW °C °C/W UNITS V V V A A UNITS V mA A A 40 25 6.0 1.0 1.5 40 500 3.5 10 CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VCB=40V VEB=6.0V IC=100µA 40 IC=10mA 25 IE=100µA 6.0 IC=50mA, IB=5.0mA 25 IC=100mA, IB=10mA 40 IC=200mA, IB=20mA 80 IC=500mA, IB=50mA 150 IC=800mA, IB=80mA 220 IC=1.0A, IB=100mA 275 IC=800mA, IB=80mA VCE=1.0V, IC=10mA MAX 100 100 50 75 150 250 400 450 1.1 0.9 UNITS nA nA V V V mV mV mV mV mV mV V V R1 (18-January 2010) CMLM7405 MULTI DISCRETE MODULE ™ SURFACE MOUNT HIGH CURRENT LOW VCE(SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN hFE VCE=1.0V, IC=10mA 100 hFE VCE=1.0V, IC=100mA 100 hFE VCE=1.0V, IC=500mA 100 hFE VCE=1.0V, IC=1.0A 50 fT VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz ELECTRICAL CHARACTERISTICS - D1: (TA=25°C) IR VR=10V IR VR=30V BVR IR=500µA VF IF=100µA VF IF=1.0mA VF IF=10mA VF IF=100mA VF IF=500mA CT VR=1.0V, f=1.0MHz MAX 300 UNITS 15 MHz pF 20 100 40 0.13 0.21 0.27 0.35 0.47 50 µA µA V V V V V V pF SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Cathode D1 4) Anode D1 5) Anode D1 6) Collector Q1 MARKING CODE: C57 R1 (18-January 2010) w w w. c e n t r a l s e m i . c o m