CMLT2222AG

CMLT2222AG SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. These PICOmini™ devices have been designed for small signal general purpose and switching applications. MARKING CODE: 2CG SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA 75 40 6.0 600 350 300 150 -65 to +150 357 UNITS V V V mA mW mW mW C C/W O O ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS ICBO VCB=60V ICBO VCB=60V, TA=125 °C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V BVCBO IC=10μA BVCEO IC=10mA BVEBO IE=10μA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=1.0V, IC=150mA hFE VCE=10V, IC=150mA hFE VCE=10V, IC=500mA (TA=25°C unless otherwise noted) MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 0.6 1.2 2.0 35 50 75 50 100 300 40 UNITS nA μA nA nA V V V V V V V Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R3 (20-January 2010) CMLT2222AG SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS fT VCE=20V, IC=20mA, f=100MHz 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 kΩ hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 kΩ hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 x10-4 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 μS hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 μS rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 ps NF VCE=10V, IC=100mA, RS=1.0kΩ, f=1.0kHz 4.0 dB td VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 ns tr VCC=30V, VBE=0.5, IC=150mA, IB1=15mA 25 ns ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 2CG R3 (20-January 2010) w w w. c e n t r a l s e m i . c o m