CMLT3906EG

CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: CMLT3904EG*: CMLT3906EG*: CMLT3946EG*: L04 L06 L46 C4G C6G 46G SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: ♦ BVCBO from 40V MIN to 60V MIN (PNP) ♦ BVEBO from 5.0V MIN to 6.0V MIN (PNP) MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage Collector-Emitter Voltage ♦ Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance ♦ hFE from 60 MIN to 70 MIN (NPN/PNP) ♦ VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN) from 0.4V MAX to 0.2V MAX (PNP) SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA UNITS V V V mA mW mW mW °C °C/W 60 40 6.0 200 350 300 150 -65 to +150 357 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Enhanced Specification Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX ICEV VCE=30V, VEB=3.0V 50 BVCBO IC=10µA 60 115 90 BVCEO IC=1.0mA 40 60 55 BVEBO IE=10µA 6.0 7.5 7.9 VCE(SAT) IC=10mA, IB=1.0mA 0.057 0.050 0.100 VCE(SAT) IC=50mA, IB=5.0mA 0.100 0.100 0.200 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 0.75 0.85 VBE(SAT) IC=50mA, IB=5.0mA 0.85 0.85 0.95 hFE VCE=1.0V, IC=0.1mA 90 240 130 hFE VCE=1.0V, IC=1.0mA 100 235 150 hFE VCE=1.0V, IC=10mA 100 215 150 300 hFE VCE=1.0V, IC=50mA 70 110 120 hFE VCE=1.0V, IC=100mA 30 50 55 - UNITS nA V V V V V V V R4 (20-January 2010) CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 NF VCE=5.0V, IC=100μA, RS =1.0kΩ f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA MAX 4.0 8.0 12 10 400 60 4.0 35 35 200 50 UNITS MHz pF pF kΩ x10-4 μS dB ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 CMLT3904E CMLT3904EG* * Device is Halogen Free by design CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* R4 (20-January 2010) w w w. c e n t r a l s e m i . c o m