CMLT4413

CMLT4413 SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ device is designed for small signal general purpose amplifier and switching applications. MARKING CODE: PC3 SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA NPN (Q1) 60 40 6.0 PNP (Q2) 40 40 5.0 600 350 300 150 -65 to +150 357 UNITS V V V mA mW mW mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=35V, VEB=0.4V 0.1 0.1 IBEV VCE=35V, VEB=0.4V 0.1 0.1 BVCBO IC=100μA 60 40 BVCEO IC=1.0mA 40 40 BVEBO IE=100μA 6.0 5.0 VCE(SAT) IC=150mA, IB=15mA 0.40 0.40 VCE(SAT) IC=500mA, IB=50mA 0.75 0.75 VBE(SAT) IC=150mA, IB=15mA 0.75 0.95 0.75 0.95 VBE(SAT) IC=500mA, IB=50mA 1.2 1.3 hFE VCE=1.0V, IC=0.1mA 20 30 hFE VCE=1.0V, IC=1.0mA 40 60 hFE VCE=1.0V, IC=10mA 80 100 hFE VCE=1.0V, IC=150mA 100 300 hFE VCE=2.0V, IC=150mA 100 300 hFE VCE=2.0V, IC=500mA 40 20 fT VCE=10V, IC=20mA, f=100MHz 250 200 Cob VCB=5.0V, IE=0, f=1.0MHz 6.5 8.5 Cib VBE=0.5V, IC=0, f=1.0MHz 30 30 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 UNITS μA μA V V V V V V V MHz pF pF R1 (20-January 2010) CMLT4413 SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 15 1.5 15 hre hfe hoe td tr ts tf VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA VCC=30V, VBE=2.0V, IC=150mA, IB1=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA 0.1 40 1.0 8.0 500 30 15 20 225 30 0.1 60 1.0 8.0 500 100 15 20 225 30 UNITS kΩ x10-4 μS ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: PC3 R1 (20-January 2010) w w w. c e n t r a l s e m i . c o m