CMLT491E_10

CMLT491E_10

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMLT491E_10 - SURFACE MOUNT NPN SILICON TRANSISTOR - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMLT491E_10 数据手册
CMLT491E SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT491E type is an NPN Low VCE(SAT) 1.0 Amp transistor, epoxy molded in a space saving PICOmini™ SOT-563 surface mount package and designed for applications requiring a high current capability and low saturation voltages. MARKING CODE: L49 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT Cob SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ,Tstg ΘJA 80 60 5.0 1.0 2.0 200 250 -65 to +150 500 UNITS V V V A A mA mW °C °C/W CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=60V VEB=4.0V IC=100µA 80 IC=10mA 60 IE=100µA 5.0 IC=500mA, IB=50mA IC=1.0A, IB=100mA IC=1.0A, IB=100mA VCE=5.0V, IC=1.0A VCE=5.0V, IC=1.0mA 200 VCE=5.0V, IC=500mA 200 VCE=5.0V, IC=1.0A 50 VCE=5.0V, IC=2.0A 15 VCE=10V, IC=50mA, f=100MHz 150 VCB=10V, IE=0, f=1.0MHz MAX 100 100 0.20 0.40 1.1 1.0 600 UNITS nA nA V V V V V V V 10 MHz pF R3 (20-January 2010) CMLT491E SURFACE MOUNT NPN SILICON TRANSISTOR SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector 2) Collector 3) Base 4) Emitter 5) Collector 6) Collector Pins 1, 2, 5 and 6 are common. MARKING CODE: L49 R3 (20-January 2010) w w w. c e n t r a l s e m i . c o m
CMLT491E_10
1. 物料型号: - 型号:CMLT491E - 制造商:CENTRAL SEMICONDUCTOR - 封装:PICOmini™ SOT-563

2. 器件简介: - 该型号为NPN低VCE(SAT)晶体管,具有1.0A的集电极电流能力,饱和电压低,采用节省空间的PICOmini™ SOT-563表面贴装封装,适用于需要高电流能力和低饱和电压的应用。

3. 引脚分配: - 引脚1和2:集电极 - 引脚3:基极 - 引脚4:发射极 - 引脚5和6:集电极(共同)

4. 参数特性: - 最大额定值: - 集-基电压(VCBO):80V - 集-射电压(VCEO):60V - 发-基电压(VEBO):5.0V - 连续集电极电流(Ic):1.0A - 峰值集电极电流(ICM):2.0A - 连续基极电流(B):200mA - 功率耗散(PD):250mW - 工作和存储结温(TJ,Tstg):-65至+150°C - 热阻(θJA):500°C/W

5. 功能详解: - 电气特性: - 集电极-基极漏电流(ICBO):100nA - 发射极-基极漏电流(EBO):100nA - 集电极-基极击穿电压(BVCBO):80V - 集电极-发射极击穿电压(BVCEO):60V - 发射极-基极击穿电压(BVEBO):5.0V - 饱和压降(VCE(SAT)):0.20V至0.40V - 基极-发射极饱和电压(VBE(SAT)):1.1V - 基极-发射极开启电压(VBE(ON)):1.0V - 电流增益(hFE):15至600 - 截止频率(fT):150MHz - 集电极-基极电容(Cob):10pF

6. 应用信息: - 适用于需要高电流能力和低饱和电压的应用。

7. 封装信息: - 封装类型:SOT-563 - 尺寸参数以英寸和毫米给出,具体数值请参考PDF文档中的“DIMENSIONS”部分。
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