CMLT5088EM

CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE(ON) characteristics. This device is designed for applications requiring high gain and low noise. MARKING CODE: 88M FEATURES: • Transistor pair matched for VBE(ON) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W UNITS nA nA V V V mV mV mV SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 50 50 5.0 100 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS ICBO VCB=20V IEBO VEB=3.0V BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=100μA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=5.0V, IC=0.1mA hFE VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=100mA fT VCE=5.0V, IC=500μA, f=20MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hfe VCE=5.0V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS |VBE1-VBE2| VCE=5.0V, IC=1.0μA |VBE1-VBE2| VCE=5.0V, IC=5.0μA |VBE1-VBE2| VCE=5.0V, IC=10μA |VBE1-VBE2| VCE=5.0V, IC=100μA (TA=25°C unless otherwise noted) MIN TYP MAX 50 50 50 135 50 65 5.0 8.7 45 100 110 400 700 800 300 430 900 300 435 300 430 50 125 100 4.0 15 350 1400 3.0 MIN MAX 10 10 10 10 UNITS mV mV mV mV MHz pF pF dB R1 (20-January 2010) CMLT5088EM SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 88M R1 (20-January 2010) w w w. c e n t r a l s e m i . c o m