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CMLT5551

CMLT5551

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMLT5551 - SURFACE MOUNT PICOmini DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS - Central Semi...

  • 详情介绍
  • 数据手册
  • 价格&库存
CMLT5551 数据手册
CMLT5551 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ devices has been designed for small signal general purpose and switching applications. MARKING CODE: 5C5 SOT-563 CASE MAXIMUM RATINGS: (TA=25 C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC PD TJ,Tstg ΘJA O O UNITS 180 160 6.0 600 350 -65 to +150 357 V V V mA mW C C/W O O ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25 C unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF TEST CONDITIONS VCB=120V VCB=120V, TA=100°C IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA 80 80 30 100 50 300 6.0 200 8.0 dB MHz pF 250 180 160 6.0 0.15 0.20 1.00 1.00 MIN MAX 50 50 UNITS nA µA V V V V V V V VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz R0 (15-October 2004) Central TM CMLT5551 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Semiconductor Corp. SOT-563 CASE - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: 5C5 R0 (15-October 2004)
CMLT5551
1. 物料型号:CMLT5551 2. 器件简介:CMLT5551由两个独立的NPN硅晶体管组成,采用外延平面工艺制造,并封装在SOT-563表面贴装封装中。该PICOmini™器件设计用于小信号通用和开关应用。 3. 引脚分配: - 1) EMITTER Q1 - 2) BASE Q1 - 3) COLLECTOR Q2 - 4) EMITTER Q2 - 5) BASE Q2 - 6) COLLECTOR Q1 4. 参数特性: - 最大额定值: - 集电极-基极电压(VCBO):180V - 集电极-发射极电压(VCEO):160V - 发射极-基极电压(VEBO):6.0V - 集电极电流(Ic):600mA - 功率耗散(PD):350mW - 电气特性(TA=25°C): - CBO(VCB=120V):50nA - BVCBO(Ic=100uA):180V - BVCEO(Ic=1.0mA):160V - BVEBO(IE=10mA):6.0V - VCE(SAT)(Ic=10mA, Ig=1.0mA):0.15V - VBE(SAT)(Ic=10mA, Ig=1.0mA):1.00V - hFE(VCE=5.0V, Ic=1.0mA):80 - fT(VCE=10V, Ic=10mA f=100MHz):100MHz 5. 功能详解:CMLT5551是双NPN小信号硅开关晶体管,适用于小信号通用和开关应用。 6. 应用信息:适用于小信号通用和开关应用。 7. 封装信息:SOT-563表面贴装封装。
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