CMLT8099M

CMLT8099M SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE(ON) characteristics. This PICOmini™ device is manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. MARKING CODE: 8CM SOT-563 CASE • Device is Halogen Free by design APPLICATIONS: • Small signal general purpose amplifiers MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Transistor pair matched for VBE(ON) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 80 80 6.0 500 350 -65 to +150 357 UNITS V V V mA mW °C °C/W UNITS µA µA V V V V V V ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS ICBO VCB=80V IEBO VBE=6.0V BVCBO IC=100µA BVCEO IC=10mA BVEBO IE=10µA VCE(SAT) IC=100mA, IB=5.0mA VCE(SAT) IC=100mA, IB=10mA VBE(ON) VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=100mA fT VCE=5.0V, IC=10mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS |VBE1-VBE2| VCE=5.0V, IC=1.0µA |VBE1-VBE2| VCE=5.0V, IC=5.0µA |VBE1-VBE2| VCE=5.0V, IC=10µA |VBE1-VBE2| VCE=5.0V, IC=100µA (TA=25°C unless otherwise noted) MIN MAX 0.1 0.1 80 80 6.0 0.4 0.3 0.6 0.8 100 300 100 75 150 6.0 25 MIN MAX 10 10 10 10 MHz pF pF UNITS mV mV mV mV R1 (20-January 2010) CMLT8099M SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 8CM R1 (20-January 2010) w w w. c e n t r a l s e m i . c o m