CMNDM7001

CMNDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM7001 is an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: AC SOT-953 CASE • Device is Halogen Free by design FEATURES: • Low 0.5mm Package Profile • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 UNITS V V mA mA mW °C APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=10V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) gfs Crss Ciss Coss ton toff VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA VGS=1.5V, ID=1.0mA VDS =10V, ID=100mA VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA VDD=3.0V, VGS=2.5V, ID=10mA 100 20 0.6 TYP MAX 1.0 1.0 0.9 3.0 4.0 15 UNITS μA μA V V Ω Ω Ω mS pF pF pF ns ns 4.0 9.0 9.5 50 75 R1 (25-January 2010) CMNDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-953 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Drain 4) Source 5) Gate MARKING CODE: AC R1 (25-January 2010) w w w. c e n t r a l s e m i . c o m