CMNDM8001

CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: BC SOT-953 CASE • Device is Halogen Free by design FEATURES: • Low 0.5mm Package Profile • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 UNITS V V mA mA mW °C APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX 1.0 1.0 20 0.6 1.1 8.0 12 45 100 15 45 15 35 80 UNITS μA μA V V Ω Ω Ω mS pF pF pF ns ns IGSSF, IGSSR VGS=10V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS=0, ID=100μA VGS(th) rDS(ON) rDS(ON) rDS(ON) gfs Crss Ciss Coss ton toff VDS=VGS, VGS=4.0V, ID=250μA ID=10mA VGS=2.5V, ID=10mA VGS=1.5V, ID=1.0mA VDS =10V, ID=100mA VGS=0, f=1.0MHz VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA VDD=3.0V, VGS=2.5V, ID=10mA VDS=3.0V, VDS=3.0V, R1 (25-January 2010) CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-953 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Drain 2) Drain 3) Drain 4) Source 5) Gate MARKING CODE: BC R1 (25-January 2010) w w w. c e n t r a l s e m i . c o m