CMNT3904E

CMNT3904E

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMNT3904E - COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMNT3904E 数据手册
CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMNT3904E/CMNT3906E Low VCE (SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini™ SOT-953 package, these components provide performance characteristics suitable for the most demanding size constrained applications. SOT-953 CASE FEATURES • Very Small Package Size • Low Package Profile, 0.5mm • 200mA Collector Current • Low VCE(SAT) (0.1V Typ @ 50mA) • Small, FEMTOmini™ 1 x 0.8mm, SOT-953 Surface Mount Package CMNT3904E MARKING CODE: CL CMNT3906E MARKING CODE: CM APPLICATIONS • DC / DC Converters • Voltage Clamping • Protection Circuits • Battery powered equipment including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 250 -65 to +150 500 UNITS V V V mA mW °C °C/W ♦ Collector-Base Voltage ♦ Emitter-Base Voltage Collector Current MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=30V, VEB=3.0V IC=10μA 60 115 ♦ BVCBO BVCEO IC=1.0mA 40 60 ♦ BVEBO IE=10μA 6.0 7.5 IC=10mA, IB=1.0mA .057 ♦ VCE(SAT) ♦ VCE(SAT) IC=50mA, IB=5.0mA 0.1 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 VBE(SAT) IC=50mA, IB=5.0mA 0.85 ♦ hFE VCE=1.0V, IC=0.1mA 90 240 VCE=1.0V, IC=1.0mA 100 235 ♦ hFE ♦ Enhanced Specification PNP TYP 90 55 7.9 .05 0.1 0.75 0.85 130 150 MAX 50 0.1 0.2 0.85 0.95 UNITS nA V V V V V V V R1 (18-January 2008) Central TM CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS NPN TYP 215 110 50 PNP TYP 150 120 55 Semiconductor Corp. ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS hFE VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA ♦ hFE hFE VCE=1.0V, IC=100mA fT VCE=20V, IC=10mA, f=100MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz hre VCE=10V, IC=1.0mA, f=1.0kHz hfe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=100μA, RS =1.0kΩ, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts tf VCC=3.0V, VCC=3.0V, IC=10mA, IC=10mA, IB1=IB2=1.0mA IB1=IB2=1.0mA MIN 100 70 30 300 MAX 300 UNITS 1.0 0.1 100 1.0 4.0 8.0 12 10 400 60 4.0 35 35 200 50 MHz pF pF kΩ X10-4 μmhos dB ns ns ns ns ♦ Enhanced Specification SOT-953 - MECHANICAL OUTLINE Lead Code: 1) COLLECTOR 2) COLLECTOR 3) COLLECTOR 4) EMITTER 5) BASE CMNT3904E MARKING CODE: CL CMNT3906E MARKING CODE: CM R1 (18-January 2008)
CMNT3904E
1. 物料型号: - CMNT3904E:NPN型晶体管 - CMNT3906E:PNP型晶体管

2. 器件简介: - Central Semiconductor生产的CMNT3904E和CMNT3906E晶体管,分别为NPN和PNP类型,设计用于对尺寸和功耗有严格要求的应用场合。这些组件采用FEMTOmini™ SOT-953表面贴装封装,提供适合最严格尺寸限制应用的性能特性。

3. 引脚分配: - 1) 集电极 - 2) 集电极 - 3) 集电极 - 4) 发射极 - 5) 基极

4. 参数特性: - 非常小的封装尺寸 - 低封装高度,0.5mm - 集电极电流200mA - 低VCE(SAT)(0.1V典型值@50mA)

5. 功能详解应用信息: - 应用包括DC/DC转换器、电压钳位、保护电路以及包括手机、数码相机、寻呼机、PDA、笔记本电脑等电池供电设备。

6. 封装信息: - SOT-953表面贴装封装,尺寸为1 x 0.8mm。
CMNT3904E 价格&库存

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