CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTOR
SOT-953 CASE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMNT3904E
and CMNT3906E Low VCE(SAT) NPN and PNP
Transistors, respectively, are designed for applications
where ultra small size and power dissipation are
the prime requirements. Packaged in an SOT-953
package, these components provide performance
characteristics suitable for the most demanding size
constrained applications.
MARKING CODES: CMNT3904E: CL
CMNT3906E: CM
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
Very Small Package Size
Low Package Profile, 0.5mm
200mA Collector Current
Low VCE(SAT) (0.1V Typ @ 50mA)
• Small, 1 x 0.8mm, SOT-953
Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
DC-DC Converters
Voltage Clamping
Protection Circuits
Battery powered equipment including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SYMBOL UNITS
VCBO 60
VCEO 40
V
V
VEBO 6.0
V
IC 200 mA
PD 250 mW
TJ, Tstg
-65 to +150
°C
ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
ICEV VCE=30V, VEB=3.0V
50
nA
♦ BVCBO IC=10µA
60 115 90 V
BVCEO IC=1.0mA
40 60 55 V
♦ BVEBO IE=10µA
6.0 7.5 7.9 V
♦ VCE(SAT) IC=10mA, IB=1.0mA .057 .05 0.1 V
♦ VCE(SAT) IC=50mA, IB=5.0mA 0.1 0.1 0.2 V
VBE(SAT) IC=10mA, IB=1.0mA
0.65 0.75 0.75 0.85 V
VBE(SAT) IC=50mA, IB=5.0mA 0.85 0.85 0.95 V
♦ hFE VCE=1.0V, IC=0.1mA
90
240
130
♦ hFE VCE=1.0V, IC=1.0mA
100 235 150
♦ Enhanced Specification
R4 (15-September 2022)
CMNT3904E NPN
CMNT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
NPN
PNP
SYMBOL TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
hFE VCE=1.0V, IC=10mA
100 215 150 300
♦ hFE VCE=1.0V, IC=50mA
70
110
120
hFE VCE=1.0V, IC=100mA
30
50
55
fT VCE=20V, IC=10mA, f=100MHz
300
MHz
Cob VCB=5.0V, IE=0, f=1.0MHz
4.0
pF
Cib VBE=0.5V, IC=0, f=1.0MHz
12
pF
hie VCE=10V, IC=1.0mA, f=1.0kHz
1.0
12
kΩ
hre VCE=10V, IC=1.0mA, f=1.0kHz
0.1
10
X10-4
hfe VCE=10V, IC=1.0mA, f=1.0kHz
100 400
hoe VCE=10V, IC=1.0mA, f=1.0kHz
1.0
60
µS
NF VCE=5.0V, IC=100µA, RS =1.0kΩ,
f=10Hz to 15.7kHz
4.0
dB
td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
170
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
80
ns
♦ Enhanced Specification
SOT-953 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Collector
2) Collector
3) Collector
4) Emitter
5) Base
CMNT3904E
MARKING CODE: CL
CMNT3906E
MARKING CODE: CM
R4 (15-September 2022)
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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