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CMNT3904E_10

CMNT3904E_10

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    CMNT3904E_10 - ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR - Central Semic...

  • 数据手册
  • 价格&库存
CMNT3904E_10 数据手册
CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNT3904E and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini™ SOT-953 package, these components provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMNT3904E: CL CMNT3906E: CM APPLICATIONS • • • • DC / DC Converters Voltage Clamping Protection Circuits Battery powered equipment including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop Computers, etc. SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 250 -65 to +150 500 UNITS V V V mA mW °C °C/W SOT-953 CASE FEATURES • • • • Very Small Package Size Low Package Profile, 0.5mm 200mA Collector Current Low VCE(SAT) (0.1V Typ @ 50mA) • Small, FEMTOmini™ 1 x 0.8mm, SOT-953 Surface Mount Package ♦ Collector-Base Voltage ♦ Emitter-Base Voltage MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=30V, VEB=3.0V ♦ BVCBO IC=10µA 60 115 BVCEO IC=1.0mA 40 60 ♦ BVEBO IE=10µA 6.0 7.5 ♦ VCE(SAT) IC=10mA, IB=1.0mA .057 ♦ VCE(SAT) IC=50mA, IB=5.0mA 0.1 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 VBE(SAT) ♦ hFE ♦ hFE ♦ Enhanced Specification PNP TYP 90 55 7.9 .05 0.1 0.75 0.85 130 150 MAX 50 0.1 0.2 0.85 0.95 UNITS nA V V V V V V V IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA 90 100 0.85 240 235 R2 (25-January 2010) CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS MIN hFE VCE=1.0V, IC=10mA 100 ♦ hFE VCE=1.0V, IC=50mA 70 hFE VCE=1.0V, IC=100mA 30 fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 NF VCE=5.0V, IC=100μA, RS =1.0kΩ, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA ♦ Enhanced Specification NPN TYP 215 110 50 PNP TYP 150 120 55 MAX 300 UNITS 4.0 8.0 12 10 400 60 4.0 35 35 200 50 MHz pF pF kΩ X10-4 μS dB ns ns ns ns SOT-953 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Collector 3) Collector 4) Emitter 5) Base CMNT3904E MARKING CODE: CL CMNT3906E MARKING CODE: CM R2 (25-January 2010) w w w. c e n t r a l s e m i . c o m
CMNT3904E_10 价格&库存

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