CMOSH-3
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT SILICON
SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH-3 is a
silicon Schottky diode, epoxy molded in an SOD-523
surface mount package, designed for fast switching
applications requiring a low forward voltage drop.
MARKING CODE: 53
SOD-523 CASE
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=10ms
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VRRM
30
UNITS
V
IF
IFRM
IFSM
100
mA
350
mA
750
mA
PD
TJ, Tstg
250
mW
-65 to +150
°C
ΘJA
500
°C/W
ELECTRICAL
SYMBOL
IR
IR
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VR=25V
90
VR=25V, TA=100°C
25
BVR
IR=100μA
VF
IF=2.0mA
VF
VF
CJ
trr
MAX
500
UNITS
nA
100
μA
0.29
0.33
V
IF=15mA
IF=100mA
0.37
0.45
V
0.51
1.00
VR=1.0V, f=1.0MHz
7.0
IF=IR=10mA, Irr=1.0mA, RL=100Ω
30
V
V
pF
5.0
ns
R6 (11-February 2016)
CMOSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
SOD-523 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING CODE: 53
R6 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
CMOSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
CMOSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (11-February 2016)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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