CMOSH-4ETR

CMOSH-4ETR

  • 厂商:

    CENTRAL(中环)

  • 封装:

    SOD-523(SC-79)

  • 描述:

    DIODESCHOTTKY40V200MASOD523

  • 详情介绍
  • 数据手册
  • 价格&库存
CMOSH-4ETR 数据手册
CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an enhanced version of the CMOSH-3 silicon Schottky diode in an SOD-523 surface mount package. MARKING CODE: 4E ENHANCED SPECIFICATIONS: ♦ IF from 100mA MAX to 200mA MAX ♦ BVR from 30V MIN to 40V MIN SOD-523 CASE MAXIMUM RATINGS: (TA=25°C) ♦ Peak Repetitive Reverse Voltage ♦ Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR ♦ BVR ♦ VF from 1.0V MAX to 0.8V MAX SYMBOL VRRM 40 UNITS V IF IFRM IFSM 200 mA 350 mA 750 mA PD TJ, Tstg 250 mW -65 to +150 °C ΘJA 500 °C/W CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP VR=25V 90 VR=25V, TA=100°C 25 IR=100μA 40 MAX 500 UNITS nA 100 μA 50 V VF IF=2.0mA 0.29 0.33 V ♦ VF ♦ VF ♦♦ VF IF=15mA 0.37 0.42 V IF=100mA IF=200mA 0.51 0.80 V 0.65 1.0 V CJ VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω pF 5.0 ns ♦ Enhanced specification. ♦♦ Additional Enhanced specification. R5 (16-February 2016) CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: 4E R5 (16-February 2016) w w w. c e n t r a l s e m i . c o m CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE TYPICAL ELECTRICAL CHARACTERISTICS R5 (16-February 2016) w w w. c e n t r a l s e m i . c o m CMOSH-4E ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE TYPICAL ELECTRICAL CHARACTERISTICS R5 (16-February 2016) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)
CMOSH-4ETR
物料型号:CMOSH-4E

器件简介:这是CMOSH-3硅肖特基二极管的增强版本,采用SOD-523表面安装封装。

引脚分配:文档中未明确列出引脚分配,但通常在SOD-523封装中,较短的引脚是阳极,较长的是阴极。

参数特性: - 最大重复峰值反向电压(VRRM):40V - 连续正向电流(IF):200mA - 峰值正向浪涌电流(IFSM),10ms脉冲:750mA - 功率耗散(PD):250mW - 工作和存储结温(TJ.Tstg):-65°C 至 +150°C - 热阻(θJA):500°C/W

功能详解:文档提供了详细的电气特性表,包括在不同条件下的反向电流(IR)、正向电压(VF)和电容(CJ)等参数。

应用信息:文档提到了CENTRAL SEMICONDUCTOR提供的设计师支持和服务,包括免费快速样品、在线技术数据、SPICE模型、环境法规合规性等。

封装信息:SOD-523封装的机械轮廓图和尺寸数据被提供,包括英寸和毫米单位的最小和最大尺寸。
CMOSH-4ETR 价格&库存

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