CMPD1001A

CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001A CMPD1001S SINGLE DUAL, COMMON ANODE DUAL, IN SERIES MARKING CODE: L20 MARKING CODE: L22 MARKING CODE: L21 SYMBOL VR IF IFRM IRRM IFSM IFSM PD TJ, Tstg ΘJA 90 250 600 600 6.0 1.0 350 -65 to +150 357 UNITS V mA mA mA A A mW °C °C/W MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Repetitive Reverse Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR IR BVR VF VF VF VF VF CT trr VR=90V VR=90V, TA=150°C IR=100μA IF=10mA IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1.0MHz IR=IF=30mA, Rec. to 3.0mA, RL=100Ω MAX 100 100 UNITS nA μA V V V V V V pF ns 90 0.75 0.84 0.90 1.00 1.25 35 50 R6 (25-January 2010) CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD1001 LEAD CODE: 1) Anode 2) No Connection 3) Cathode MARKING CODE: L20 CMPD1001A LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 MARKING CODE: L22 CMPD1001S LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: L21 R6 (25-January 2010) w w w. c e n t r a l s e m i . c o m