CMPD2004A

CMPD2004A

  • 厂商:

    CENTRAL(中环)

  • 封装:

  • 描述:

    CMPD2004A - SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE - Central Semiconductor Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
CMPD2004A 数据手册
CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C CMPD2004S Central TM Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. SOT-23 CASE The following configurations are available: CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C CMPD2004S SINGLE DUAL, COMMON CATHODE DUAL, IN SERIES SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING CODE: A82 MARKING CODE: C3C MARKING CODE: C3S MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: D53 DB8 DB7 DB6 MAXIMUM RATINGS: (TA=25°C) CMPD2003 CMPD2003C CMPD2003S 200 250 200 250 625 4.0 1.0 350 SYMBOL Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1.0 µs Forward Surge Current, tp=1.0 s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VR VRRM IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA CMPD2004 CMPD2004A CMPD2004C CMPD2004S 240 300 200 225 UNITS V V mA mA mA A A mW °C °C/W -65 to +150 357 R7 (6-August 2003) Central TM Semiconductor Corp. CMPD2003 CMPD2003C CMPD2003S CMPD2004 CMPD2004A CMPD2004C CMPD2004S SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) CMPD2003 CMPD2003C CMPD2003S MIN MAX 250 100 100 1.0 1.25 5.0 50 CMPD2004 CMPD2004A CMPD2004C CMPD2004S MIN MAX 300 100 100 1.0 5.0 50 SYMBOL BVR IR IR IR IR VF VF CT trr TEST CONDITIONS IR=100µA VR=200V VR=200V, TA=150°C VR=240V VR=240V, TA=150°C IF=100mA IF=200mA VR=0V, f=1.0 MHz IR=IF=30mA, RL=100Ω, Rec. to 3.0mA UNITS V nA µA nA µA V V pF ns SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: SEE PREVIOUS PAGE 2 1 2 1 2 1 2 1 D1 D2 D1 D2 D1 D2 3 3 3 3 LEAD CODE: CMPD2003 CMPD2004 1) Anode 2) No Connection 3) Cathode LEAD CODE: CMPD2004A 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 LEAD CODE: CMPD2003C CMPD2004C 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 LEAD CODE: CMPD2003S CMPD2004S 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 R7 (6-August 2003)
CMPD2004A
1. 物料型号: - CMPD2003:单路 - CMPD2003C:双路,共阴极 - CMPD2003S:双路,串联 - CMPD2004:单路 - CMPD2004A:双路,共阳极 - CMPD2004C:双路,共阴极 - CMPD2004S:双路,串联

2. 器件简介: - 这些型号的硅开关二极管由Central Semiconductor Corp.生产,采用外延平面工艺制造,适用于需要高电压能力的场合。

3. 引脚分配: - CMPD2003/CMPD2004:1脚为阳极,2脚为阴极。 - CMPD2003C/CMPD2004C:1脚为阳极,2脚为阴极D1,3脚为阴极D2。 - CMPD2003S/CMPD2004S:1脚为阳极D1,2脚为阳极D2,3脚为阴极。

4. 参数特性: - 反向连续电压:200V/240V - 反向重复峰值电压:250V/300V - 反向重复峰值电流:200mA - 正向连续电流:250mA/225mA - 正向重复峰值电流:625mA - 正向浪涌电流:4.0A/1.0A - 功率耗散:350mW - 工作和存储结温:-65至+150°C - 热阻:357°C/W

5. 功能详解: - 这些二极管为表面贴装高压硅开关二极管,适用于需要高电压能力的电路。

6. 应用信息: - 适用于需要高电压能力的电路,如电源、电机驱动等。

7. 封装信息: - SOT-23封装,具体尺寸和机械轮廓图在文档中有详细描述。
CMPD2004A 价格&库存

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