CMPD2836E

CMPD2836E CMPD2838E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD2836E and CMPD2838E are Enhanced versions of the CMPD2836 and CMPD2838 High Speed Switching Diodes. These devices are manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 75V min to 120V min. SOT-23 CASE ♦ The following configurations are available: CMPD2836E DUAL, COMMON ANODE CMPD2838E DUAL, COMMON CATHODE VF from 1.2V max to 1.0V max. MARKING CODE: CA2E MARKING CODE: CA6E MAXIMUM RATINGS (TA=25 °C) SYMBOL VRRM IO IFM PD TJ,Tstg ΘJA 120 200 300 350 -65 to +150 357 UNITS V mA mA mW °C °C/W ♦ Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Current (tp=1.0 s) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR=100µA VR=80V IF=10mA IF=50mA IF=100mA VR=0, f=1 MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0mA MIN 120 TYP 150 100 0.72 0.84 0.92 1.5 0.85 0.95 1.0 4.0 4.0 MAX UNITS V nA V V V pF ns ♦ ♦ ♦ ♦ ♦ BVR IR VF VF VF CT trr ♦ Enhanced specification. R2 (6-August 2003) Central TM CMPD2836E CMPD2838E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES Semiconductor Corp. SOT-23 CASE - MECHANICAL OUTLINE 2 1 2 1 D1 D2 D1 D2 3 3 CMPD2836E 1) Cathode D2 2) Cathode D1 3) Anode D1, Anode D2 MARKING CODE: CA2E CMPD2838E 1) Anode D2 2) Anode D1 3) Cathode D1, Cathode D2 MARKING CODE: CA6E R2 (6-August 2003)