CMPD3003_10

CMPD3003 CMPD3003A CMPD3003C CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD3003 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring an extremely low leakage diode. SOT-23 CASE The following configurations are available: CMPD3003 SINGLE CMPD3003A DUAL, COMMON ANODE CMPD3003C DUAL, COMMON CATHODE CMPD3003S DUAL, IN SERIES MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL IR IR IR IR BVR VF VF VF VF VF VF CT MARKING MARKING MARKING MARKING SYMBOL VR IO IF IFRM IFSM IFSM PD TJ, Tstg ΘJA CODE: CODE: CODE: CODE: LLO LLA LLC LLS UNITS V mA mA mA A A mW °C °C/W 180 200 600 700 2.0 1.0 350 -65 to +150 357 CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VR=125V 1.0 VR=125V, TA=150°C 3.0 VR=180V 10 VR=180V, TA=150°C 5.0 IR=5.0µA 200 IF=1.0mA 0.62 0.72 IF=10mA 0.72 0.83 IF=50mA 0.80 0.89 IF=100mA 0.83 0.93 IF=200mA 0.87 1.10 IF=300mA 0.90 1.15 VR=0, f=1.0MHz 4.0 UNITS nA µA nA µA V V V V V V V pF R4 (25-January 2010) CMPD3003 CMPD3003A CMPD3003C CMPD3003S SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMPD3003 LEAD CODE: 1) Anode 2) No Connection 3) Cathode MARKING CODE: LLO CMPD3003A LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 MARKING CODE: LLA CMPD3003C LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 MARKING CODE: LLC CMPD3003S LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: LLS R4 (25-January 2010) w w w. c e n t r a l s e m i . c o m