CMPDM202PH

CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM202PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 202C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES: • Low rDS(ON) (0.093Ω MAX @ VGS=2.5V) • High current (ID=2.3A) • Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 20 12 2.3 9.2 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=20V, VGS=0 VGS=0, ID=250μA VGS=VDS, ID=250μA VGS=5.0V, ID=1.2A VGS=2.5V, ID=1.2A VDS=5.0V, ID=2.3A VDD=10V, VGS=0, f=1.0MHz VDD=10V, VGS=0, f=1.0MHz VDD=10V, VDD=10V, VDD=10V, VGS=0, f=1.0MHz VGS=5.0V, ID=2.3A VGS=5.0V, ID=2.3A 20 0.6 0.064 0.072 15 110 880 210 8.0 1.3 2.3 15.2 27.6 MAX 100 1.0 1.4 0.088 0.093 UNITS nA μA V V Ω Ω S pF pF pF 12 2.0 3.5 nC nC nC ns ns VDD=10V, VGS=5.0V, ID=2.3A VDD=10V, ID=2.3A, RG=10Ω VDD=10V, ID=2.3A, RG=10Ω R0 (21-October 2010) CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 202C R0 (21-October 2010) w w w. c e n t r a l s e m i . c o m