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CMPDM202PHTR

CMPDM202PHTR

  • 厂商:

    CENTRAL(中环)

  • 封装:

    SOT23F

  • 描述:

    MOSFETP-CH20V2.3ASOT-23F

  • 详情介绍
  • 数据手册
  • 价格&库存
CMPDM202PHTR 数据手册
CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM202PH is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. MARKING CODE: 202C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (0.093Ω MAX @ VGS=2.5V) • High current (ID=2.3A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS 20 UNITS V VGS ID 12 V 2.3 A 9.2 A 350 mW Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance IDM PD TJ, Tstg ΘJA -55 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) VDS=20V, VGS=0 VGS=0, ID=250μA MAX 100 UNITS nA 1.0 μA 20 V rDS(ON) VGS=VDS, ID=250μA VGS=5.0V, ID=1.2A rDS(ON) VGS=2.5V, ID=1.2A 0.058 gFS VDS=5.0V, ID=2.3A 15 S Crss VDD=10V, VGS=0, f=1.0MHz VDD=10V, VGS=0, f=1.0MHz 85 pF 800 pF Ciss Coss Qg(tot) Qgs VDD=10V, VGS=0, f=1.0MHz VDD=10V, VGS=5.0V, ID=2.3A VDD=10V, VGS=5.0V, ID=2.3A 0.6 1.4 V 0.042 0.088 Ω 0.093 Ω 75 pF 8.0 12 nC 1.3 2.0 nC 2.3 3.5 nC ton VDD=10V, VGS=5.0V, ID=2.3A VDD=10V, ID=2.3A, RG=10Ω toff VDD=10V, ID=2.3A, RG=10Ω 48 Qgd 25 ns ns R1 (11-December 2012) CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23F CASE - MECHANICAL OUTLINE 2 1 3 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 202C R1 (11-December 2012) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001) http://www.centralsemi.com PDN01070 Rev:001 4/05/18 N/A N/A Please be advised that Central Semiconductor must immediately discontinue the product(s) listed in the attached PDN notice. We are unable to accept any further orders for these products unless _____ we have available inventory on hand. You may have purchased one or more of the products listed. Please do not hesitate to contact your local Central Semiconductor sales representative with any questions or needs you may have. Central regrets any inconvenience this may cause. Sincerely, Central Semiconductor Corp. PDN01070 Rev:001 4/05/18 N/A N/A http://www.centralsemi.com Summary:The following MOSFET devices manufactured in the SOT-23F package have been discontinued and are now classified as End of Life (EOL). Rev:001 to PDN#01070, originally issued on March, 21, 2018, is being issued to remove part #s CEN1232 and CEN1233 due to market demand; these devices are once again active. Although Central Semiconductor Corp. makes every effort to continue to produce devices that have been proclaimed EOL (End of Life) by various manufacturers, it is an accepted industry practice to discontinue certain devices when customer demand falls below a minimum level of sustainability. Accordingly, the following product(s) have been transitioned to End of Life status as part of Central's Product Management Process. Any replacement product will be noted below. The effective date for placing the last purchase order will be six(6) months from the date of this notice and twelve(12) months from the notice date for final shipments; this may be extended if inventory is available. Central Part Number CMPDM202PH BK CMPDM202PH TR CMPDM203NH BK CMPDM203NH TR CMPDM302PH BK CMPDM302PH TR CMPDM303NH BK CMPDM303NH TR Replacement N/A N/A N/A N/A N/A N/A N/A N/A Central would be happy to assist you by providing additional information or technical data to help locate an alternate source if we have no replacement available. Please email your requests to engineering@centralsemi.com.
CMPDM202PHTR
物料型号:CMPDM202PH

器件简介: - 这是一个高电流P沟道增强型硅MOSFET,采用P沟道DMOS工艺制造,设计用于高速脉冲放大器和驱动应用。 - 该MOSFET提供高电流、低导通电阻(rDS(ON))、低阈值电压和低漏电流。

引脚分配: - SOT-23F封装,引脚编号为1(栅极Gate)、2(源极Source)、3(漏极Drain)。

参数特性: - 最大额定值(TA=25°C): - 漏极-源极电压(VDs):20V - 栅极-源极电压(VGS):12V - 连续漏极电流(稳态):2.3A - 最大脉冲漏极电流,tp=10s:9.2A - 功率耗散:350mW - 工作和存储结温:-55至+150°C - 热阻:357°C/W

功能详解: - 电气特性(TA=25°C,除非另有说明): - 栅极-源极漏电流(IGSSF,IGSSR):在VGs=12V,VDs=0条件下,最小值为100nA。 - 漏极-源极漏电流(lpss):在VDs=20V,VGs=0条件下,最大值为1.0uA。 - 漏极-源极击穿电压(BVDSS):在VGs=0,lp=250 A条件下,最小值为20V。 - 栅极-源极阈值电压(VGS(th)):在VGs=Vps.lD=250 A条件下,最小值为0.6V,最大值为1.4V。 - 导通电阻(DS(ON)):在VGs=5.0V.lp=1.2A条件下,最小值为0.042p,最大值为0.088p;在VGs=2.5V,ID=1.2A条件下,最小值为0.058p,最大值为0.093p。 - 存储时间(9FS):在Vps=5.0V,Ip=2.3A条件下,最小值为15s。 - 反向传输电容(Crss):在VDD=10V,VGs=0,f=1.0MHz条件下,最小值为85pF。 - 输入电容(Ciss):在VDD=10V,VGs=0,f=1.0MHz条件下,最小值为800pF。 - 输出电容(Coss):在VDD=10V,VGs=0,f=1.0MHz条件下,最小值为75pF。 - 总栅极电荷(ag(tot)):在VDD=10V,VGs=5.0V,ID=2.3A条件下,最小值为8.0nC,最大值为12nC。 - 栅极-源极电荷(Qgs):在VDD=10V,VGs=5.0V,ID=2.3A条件下,最小值为1.3nC,最大值为2.0nC。 - 栅极-漏极电荷(Qgd):在VDD=10V,VGS=5.0V,ID=2.3A条件下,最小值为2.3nC,最大值为3.5nC。 - 导通时间(ton):在VDD=10V,ID=2.3A,RG=100条件下,最小值为25ns。 - 关断时间(toff):在VDD=10V,lp=2.3A, RG=100条件下,最小值为48ns。

应用信息: - 适用于负载/电源开关、电源供应转换电路、电池供电便携设备等。

封装信息: - SOT-23F封装,机械外形图和尺寸信息提供在文档中。
CMPDM202PHTR 价格&库存

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